New Products | BASiC Semiconductor Announces New-Generation SiC MOSFETs

公開時間:2025-05-06 18:45

图片


Recently, BASiC Semiconductor officially launched its new-generation SiC MOSFET which cover 1200V/13.5mΩ and 750V/10.5mΩ for automotive main drive, 1200V/40mΩ for photovoltaic and energy storage, and 650V/40mΩ for AI power supplies & household storage inverters. This series of product will significantly improve the system efficiency and high-temperature performance of various applications, reduce energy loss, and contribute to more efficient and cost-effective power device solutions.

图片

Parameter list for New-Generation SiC MOSFETs

For delivery BASiC Semiconductor offers the options of both bare die and wafer. The commonly used packages for different application scenarios are also available:

  • The 1200V/13.5mΩ series in TO-247-3 and TO-247-4 packages.

  • The 1200V/40mΩ series in TO-247-3, TO-247-4, TO-263-7, and HSOP8 packages.

  • The 650V/40mΩ series in TO-247-3, TO-247-4, TO-263-7, TOLL, and TOLT packages.

图片

Based on the reliability-oriented closed-loop development, BASiC Semiconductor has achieved the verification   of key reliability tests at or above automotive-grade reliability standards:


HTRB：Tj=175℃，VDS=100%BV，1000H，PASS


H3TRB：TA=85℃/85%RH，VDS=80%BV，1000H，PASS


HTGB+：Tj=175℃；VGS=22V，1000H，PASS


HTGB-：Tj=175℃；VGS=-10V，1000H，PASS

Packaging Characteristics


TO-263-7：

  • Surface-mount package, compact size.

  • Specially designed source pins for superior electrica

    performance, effectively reducing losses and noise.


HSOP8：

  • Thin and compact design with multi-pin fine-pitch layout.

  • Integrated cooling structure, delivering excellent electrical performance.


TOLL：

  • TO-Leadless design, compact and space-saving.

  • Low package resistance & parasitic inductance for enhanced efficiency.

  • Top-side cooling design supports high-current applications.


TOLT(TO-Leadless with Top-side cooling)：

  • Top-side cooling structure for higher thermal reliability.

  • Especially suitable for applications with stringent thermal management requirements.

Applications


1200V 13.5mΩ discretes and modules: EV Main Drive Inverters, PCS, APF


1200V 40mΩ discretes and modules: Photovoltaic Power Generation, Energy Storage Systems,Charging Station, Welding Machines, OBC, and Automotive Air Conditioning Compressors


750V 10.5mΩ discretes and modules: EV Main Drive Inverters, OBC and DCDC converters


650V 40mΩ discretes: AI Computing Power Supplies, Micro Inverters, Telecom Power and Energy Storage Systems

The latest SiC MOSFET series from BASiC Semiconductor achieves the industry's advanced level in key parameters such as on-resistance, switching losses, and thermal resistance. Through continuous technological innovation and process optimization, BASiC is committed to delivering higher-performance, more reliable power semiconductor solutions. In the future, BASiC Semiconductor will continue to increase R&D investmentand collaborate with partners to promote the development of clean energy technologies, to build a highly efficient and sustainable energy ecosystem.

シェア：
中国広東省深セン市南山区高新園区高新南7道デジタル技術園国家工程実験室ビルB座11階
+86-755-22670439      +86-755-86706526 info@basicsemi.com
inquiry@basicsemi.com (Industrial)
autobu@basicsemi.com（Automotive）
深セン基本半導体株式会社
愛知県名古屋市西区牛島町6番1号名古屋ルーセントタワー40階

052－569-1435

infojp@basicsemi.com