Industrial Full-SiC Power Module

产品详情

PcoreTM2 E2B Full-SiC Half-Bridge MOSFET Module

BASiC Semiconductor introduces the industrial full SiC MOSFET power module Pcore2 E2B, compatible withEasyPACK 2B package. This product is designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, inference immunity, and bipolar degradation immunity.

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Product Features

- Higher wafer reliability

RDS(on) degradation due to SiC crystal defects is significantly suppressed thanks to the new internal structure.

- Superior inference immunity characteristics

Wide gate-source voltage range (Vgss: -10V~+25V), and higher threshold voltage range (Vth: 3V~5V), facilitating gate driver design.

- Enhanced thermal performance and packaging reliability

The introduction of high-performance Si3N4 AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.


Application Fields:

UPS, Fuel Cell DCDC, High Power Fast Charging Stations, etc.


Parameter List

Part No.

Vdss (V)

Rds(on) (mΩ) @ 25℃

Idnom (A)

Vgs(op) (V)


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BMF240R12E2G3

1200

5‍.0

2‍40

+18/-5
Vgs(th) (V)

Vsd (V)

Qg (nC)

Pin-Type
4.0
1.35
500
Soldering

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inquiry@basicsemi.com (Industrial)
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BASiC Semiconductor Ltd.