PcoreTM2 E2B Full-SiC Half-Bridge MOSFET Module
BASiC Semiconductor introduces the industrial full SiC MOSFET power module Pcore™2 E2B, compatible withEasyPACK™ 2B package. This product is designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, inference immunity, and bipolar degradation immunity.
Product Features
- Higher wafer reliability
RDS(on) degradation due to SiC crystal defects is significantly suppressed thanks to the new internal structure.
- Superior inference immunity characteristics
Wide gate-source voltage range (Vgss: -10V~+25V), and higher threshold voltage range (（Vth: 3V~5V), facilitating gate driver design.
- Enhanced thermal performance and packaging reliability
The introduction of high-performance Si3N4 AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.
Application Fields:
UPS, Fuel Cell DCDC, High Power Fast Charging Stations, etc.
Parameter List
Part No. | Vdss (V) | Rds(on) (mΩ) @ 25℃
| Idnom (A) | Vgs(op) (V) |
BMF240R12E2G3 | 1200 | 5.0 | 240 | +18/-5 |
Vgs(th) (V)
| Vsd (V) | Qg (nC) | Pin-Type |
4.0
| 1.35
| 500
| Soldering |
