Industrial Full-SiC Power Module

产品详情

PcoreTM2 E2B Full-SiC Half-Bridge MOSFET Module

BASiC Semiconductor introduces the Industrial Full-SiC MOSFET Power Module Pcore2 E2B, compatible with EasyPACK 2B package. This product is designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, inference immunity, and bipolar degradation immunity.

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Product Features

- Higher wafer reliability

RDS(on) degradation due to SiC crystal defects is significantly suppressed thanks to the new internal structure.

- Superior interference immunity characteristics

Wide gate-source voltage range (VGS: -10V~+25V), and higher gate threshold voltage (VGS(th).typ=4V), facilitating gate driver design.

- Enhanced thermal performance and packaging reliability

The introduction of high-performance Si3N4 AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.


Applications:

UPS, Fuel Cell DCDC, High Power Fast Charging Stations, etc.


Parameter List

Part No.

VDSS (V)

RDS(on) (mΩ) @ 25℃

IDnom (A)

VGS(op) (V)


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BMF240R12E2G3

1200

5‍.5

2‍40

+18/-4
VGS(th) (V)

VSD (V)

QG (nC)

Pin-Type
4.0
1.35
492
Press-Fit

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+86-755-22670439     +86-755-86706526 info@basicsemi.com
inquiry@basicsemi.com (Industrial)
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BASiC Semiconductor Ltd.