SiC MOSFETs can operate at high-frequency, high blocking voltage, and high-temperature, thus are currently the most popular WBG power semiconductor devices in the field of power electronics. The application of SiC MOSFET devices in power electronic systems instead of traditional silicon IGBT devices increases the switching frequency, improves system efficiency and power density, meanwhile reduces the overall cost of systems.
The 2nd-generation SiC MOSFET series from BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance, switching loss, and reliability.
Applications：EV motor controllers, On-board power supplies, Solar inverter, PV-Storage Integrated Converter, EV charging, UPS, etc.
Product advantage
 |  |  |  |
Lower Specific On-Resistance | Lower
Switching Losses | Higher
Reliability | Higher Operating
Junction Temperature |
SiC MOSFET
Note 1: * indicates planned product.
Note 2: Gen 1 SiC MOSFET is not for new design.
Note 3: Click on the highlighted links to download the datasheets
