SiC MOSFET

产品详情

SiC MOSFETs can operate at high-frequency, high blocking voltage, and high-temperature, thus are currently the most popular WBG power semiconductor devices in the field of power electronics. The application of SiC MOSFET devices in power electronic systems instead of traditional silicon IGBT devices increases the switching frequency, improves system efficiency and power density, meanwhile reduces the overall cost of systems.

The 2nd-generation SiC MOSFET series from BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance, switching loss, and reliability.

Applications:EV motor controllers, On-board power supplies, Solar inverter, PV-Storage Integrated Converter, EV charging, UPS, etc.

二代MOS封装图.png

Product advantage


未标题-1-01.png未标题-1-02.png未标题-1-03.png未标题-1-04.png

Lower Specific

On-Resistance

Lower

Switching Losses

Higher

Reliability

Higher Operating

Junction Temperature


SiC MOSFET

Generation

Voltage

RDS(on)

TO-247-3

TO-247-4

TO-247-4-PLUS

TO-263-7

SOT-227


NEW.png

Gen 2

1200V

65mΩ

B2M065120H

B2M065120Z


B2M065120R


40mΩ

B2M040120H

B2M040120Z


B2M040120R


35mΩ



B2M035120YP



20mΩ

*B2M020120H

*B2M020120Z

*B2M020120YP

*B2M020120R

*B2M020120N

Gen 1
1200V
160mΩB1M160120HC



80mΩ

B1M080120HCB1M080120HK


32mΩ

B1M032120HC

B1M032120HK




Note 1: * indicates planned product.

Note 2: Gen 1 SiC MOSFET is not for new design.

Note 3: Click on the highlighted links to download the datasheets





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