SiC MOSFETs

产品详情

SiC MOSFETs can operate at high-frequency, high blocking voltage, and high-temperature, thus are currently the most popular WBG power semiconductor devices in power electronics. The application of SiC MOSFET devices in power electronic systems instead of traditional Silicon IGBT devices increases the switching frequency, improves system efficiency and power density, meanwhile reduces the overall cost.

The 2nd-generation SiC MOSFET series from BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance, switching loss, and reliability.

Applications:EV motor controllers, On-board power supplies, Solar inverters, PV-Storage Integrated Converter, EV charging, UPS, etc.

二代MOS封装图.png

Product advantage


未标题-1-01.png未标题-1-02.png未标题-1-03.png未标题-1-04.png

Lower Specific

On-Resistance

Lower

Switching Losses

Higher

Reliability

Higher Operating

Junction Temperature


SiC MOSFET

Voltage

RDS(on)

(mΩ)

TO-247-3

TO-247-4

TO-247PLUS-4

TOLL

TO-263-7

SOT-227

650V40B3M040065HB3M040065ZB3M040065L

1200V

160

B2M160120H

B‍2M160120Z



B2M160120R


80

B2M080120H

 AB2M080120H

B2M080120Z‍

 AB2M080120Z



B2M080120R‍

 AB2M080120R


65

B2M065120H

B2M065120Z



B2M065120R


40

B2M040120H

B3M040120H*

B2M040120Z

B‍3M040120Z

 AB2M040120Z



B2M040120R

B‍3M040120R*

 AB2M040120R


30B2M030120H

B2M030120Z



B2M030120‍RB2M030120N
13.5B3M013C120H*B3M013C120Z



11





B2M012120N

5.5

B2M006120Y


1700V

600

B2M600170H

B2M600170Z



B2M600170R


2000V

24

Coming soon

      : Automotive

      * : Under development, to be released.

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BASiC Semiconductor Co., Ltd.