Die & Wafer Services

产品详情

Based on global advanced SiC epitaxial technology, BASiC has independently developed series products of bare dies. At present, 650V and 1200V SiC Schottky Diode and 1200V SiC MOSFET bare dies and wafer have been developed.

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SiC Schottky Diode bare dies

Part No.
VRRM

(V)

IF

(A)

BD2D04A065S16504
BD2D06A065S16506
BD2D08A065S16508
BD2D10A065S165010
BD2D15A065S165015
BD2D20A065S1650
20
BD2D30A065S165030
BD2D40A065S165040
BD2D02A120S112002
BD2D05A120S112005
BD2D08A120S112008
BD2D10A120S1120010
BD2D15A120S11200
15
BD2D20A120S1120020
BD2D30A120S1120030
BD2D40A120S1120040


SiC MOSFET bare dies(1200V)

Part No.

VDS

(V)

RDS(on)

(mΩ)

BD2M040A120S1

1200

40

BD2M065A120S1

1200

65


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BASiC Semiconductor Ltd.