Hybrid SiC Discrete Devices

BASiC Hybrid SiC Discrete Devices combine Trench & Field Stop IGBT technology and SiC Schottky Diode technology to provide a solution for hard-switching topologies that combines quality and cost effectiveness. The hybrid devices seal silicon IGBT and SiC Schottky Diode together to replace the conventional IGBT (Silicon IGBT co-packed with silicon Fast Recovery Diode) in certain applications, where the switching loss can be greatly reduced. They can be potentially applied in Energy Storage System (ESS), On Board Charger (OBS), Uninterruptible Power Supply (UPS), Solar String inverters etc.

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