Hybrid SiC Discrete Devices

产品详情

BASiC Hybrid SiC Discrete Devices combine Trench & Field Stop IGBT and SiC Schottky Diode to provide a solution for hard-switching topologies that combines quality and cost effectiveness. The hybrid devices seal Silicon IGBT and SiC Schottky Diode together to replace the conventional IGBT (Silicon IGBT co-packed with silicon Fast Recovery Diode) in certain applications, where the switching loss can be greatly reduced. They can be potentially applied in Energy Storage System (ESS), On Board Charger (OBC), Uninterruptible Power Supply (UPS), Solar String Inverter etc.

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Product list

Part Number	BV (V)	Data Sheet	I_C(A) @100℃	V_CE(sat) (V)	V_F (V)	I_F(A) @100℃	E_on (mJ)	E_off (mJ)	Package Name
BGH75N65HS1	650		75	1.64	1.40	74	2.12	1.31	TO-247-3
BGH50N65HF1	650		50	1.55	1.39	34	0.82	0.59	TO-247-3
BGH50N65HS1	650		50	1.55	1.30	51	0.82	0.59	TO-247-3
BGH50N65ZF1	650		50	1.55	1.39	34	0.41	0.72	TO-247-4
BGH75N65HF1	650		75	1.64	1.30	51	2.12	1.31	TO-247-3
BGH75N65ZF1	650		75	1.64	1.30	51	0.90	1.27	TO-247-4
BGH40N120HS1	1200	\	40	1.9	1.30	45	1.62	1.2	TO-247-3
BGH75N120HF1	1200		75	2.2	1.30	45	4.49	2.58	TO-247-3

Product Selection Guide：

BASiC_ SiC Power Devices_Selection Guide_EN_2025Q1

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