Hybrid SiC Discrete Devices

产品详情

BASiC Hybrid SiC Discrete Devices combine Trench & Field Stop IGBT and SiC Schottky Diode to provide a solution for hard-switching topologies that combines quality and cost effectiveness. The hybrid devices seal Silicon IGBT and SiC Schottky Diode together to replace the conventional IGBT (Silicon IGBT co-packed with silicon Fast Recovery Diode) in certain applications, where the switching loss can be greatly reduced. They can be potentially applied in Energy Storage System (ESS), On Board Charger (OBC), Uninterruptible Power Supply (UPS), Solar String Inverter etc.



混合碳化硅分立器件灰底.png


Product list


Part   Number

BV

(V)

Data

Sheet

IC(A)

@100℃

VCE (sat)

(V)

VF

(V)

IF(A)

@100℃

Eon

(mJ)

Eoff

(mJ)

Package Name
微信图片_20230512174424.pngBGH75N65HS1650
333.png751.64
1.40
74
2.12
1.31
TO-247-3

BGH50N65HF1650333.png501.551.3934
0.820.59TO-247-3

BGH50N65HS1650333.png501.551.3051
0.820.59TO-247-3

BGH50N65ZF1650333.png
501.551.39340.410.72TO-247-4

BGH75N65HF1
650333.png
751.641.30512.121.31TO-247-3

BGH75N65ZF1650333.png
751.641.30510.901.27TO-247-4

BGH40N120HS1
1200
\401.9
1.30
45
1.62
1.2
TO-247-3

BGH75N120HF1

1200
333.png75
2.2
1.30
45
4.49
2.58
TO-247-3

       



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