Pcore™2 - Automotive ED3 SiC MOSFET module

产品详情

Pcore™2 series features with low switching losses, high-speed switching, reduced temperature dependence, high reliability (higher than AQG-324 reference standard) and junction temperatures up to 175°C. Due to the same package size with conventional silicon-based module, it can replace same IGBT module in certain extent, thus can effectively shortening the product development cycle and improving the operation efficiency.

ED3.png


Parameter List

ProductVDSS(V)ID(A)RDS(on))(@Tvj=25Package Name
BMF600R12MCC41200
6001.8

Pcore™2

BMF400R12MCC44002.8
11th Floor, Block B, National Engineering Laboratory Building, Nanshan District, Shenzhen, China
+86-755-22670439     +86-755-86706526 info@basicsemi.com
inquiry@basicsemi.com (Industrial)
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BASiC Semiconductor Co., Ltd.