ED3 Industrial Half-Bridge SiC MOSFET Modules

BASiC Semiconductor introduces the 1200V industrial half-bridge SiC MOSFET module Pcore™2 ED3 series. Utilizing next-generation SiC MOSFET technology in combination with high-performance Si₃N₄ AMB substrates and copper base plate packaging, this series achieves significant improvements in both power density and reliability.

For applications including photovoltaics, energy storage, and industrial motor drives, the modules feature low on-resistance and low switching losses while supporting higher switching frequencies. Simulation comparisons with IGBT modules of the same voltage class demonstrate that the ED3 series has significant advantages in efficiency and thermal performance, helping systems achieve higher power density and lower cooling costs. In addition, BASiC Semiconductor provides a complete plug-and-play driver board solution compatible with this module, enabling customers to achieve rapid integration and efficient development.

Features

- New generation of SiC MOSFET technology with enhanced performance

- Low on-resistance with excellent R_DS(on) performance at high temperatures

- Low switching losses, enabling higher switching frequencies and increased power density

- Introduction of high-performance Si₃N₄ AMB ceramic substrate and high-temperature solder for improved reliability

- High reliability and power density

- Copper base plate for optimized heat dissipation

Applications: Energy Storage Systems (ESS), Solid State Transformers (SST), Photovoltaic Inverters,Traction Auxiliary Converters, Motor Drives.

Topology