BASiC Semiconductor introduces the Industrial Full-SiC MOSFET Power Modules such as Pcore™2 E2B, Pcore™2 E1B and Pcore™4 E1B. The products are designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, cross-talk immunity, and bipolar degradation immunity.
Product Features
- Higher wafer reliability
RDS(on) degradation due to SiC crystal defects is significantly suppressed thanks to the new internal structure.
- Superior interference immunity characteristics
Wide gate-source voltage range (VGS: -10V~+25V), and higher gate threshold voltage (VGS(th).typ=4V), facilitating gate driver design.
- Enhanced thermal performance and packaging reliability
The introduction of high-performance Si3N4 AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.
Applications:
UPS, Fuel Cell DCDC, High Power Fast Charging Stations, etc.
Parameter List
| Part No. | Data Sheet |
VDSS
(V) |
RDS(on) (mΩ) @ 25℃ | IDnom
(A) |
VGS(op)
(V) | VGS(th)
(V) |
VSD
(V) |
QG
(nC) |
Pin-Type | Package
Name |
| BMH027MR07E1G3 | 
| 650 | 30 | 40 | +18/-4 | 4.0
| 1.6 | 65 | Press-Fit | Pcore™4 E1B |
| BMF011MR12E1G3 |
| 1200 | 13 | 120 | +18/-4 | 4.0
| 1.8 | 246 | Press-Fit | Pcore™2 E1B |
| BMF008MR12E2G3 |
| 1200 | 8.1 | 160 | +18/-4 | 4.0
| 1.8 | 401 | Press-Fit | Pcore™2 E2B |
| BMF240R12E2G3 |
| 1200
| 5.5
| 240
| +18/-4 | 4.0
| 1.9 | 492
| Press-Fit | Pcore™2 E2B |
