BASiC Semiconductor Showcases SiC Solutions at CPSE 2025Issuing time:2025-05-15 12:00 From May 14th to 16th, the 4th Shanghai International Charging and Swap and Optical Storage and Charging Exhibition (CPSE 2025) was opened in Shanghai. BASiC Semiconductor made a remarkable appearance with its full range of SiC power devices and high-voltage fast charging solutions at the exhibition, attracting high attention from many industry professionals.
SiC power devices, with their excellent characteristics such as wide bandgap, high thermal conductivity, and high breakdown field strength, can significantly improve unit power density, reduce system losses, and support more compact and lightweight designs, meeting the needs of high voltage resistance, high temperature resistance, more miniaturization, and cost reduction for charging pile equipment, and helping electric vehicles achieve fast charging. At the exhibition, BASiC Semiconductor showcased its SiC power device solution optimized for high-voltage fast charging. Product series for high voltage fast charging
 In the future, BASiC will continue to increase its R&D investment in high-voltage SiC power devices, and work together with partners to promote the efficient, standardized, and intelligent development of charging and swapping networks, helping the global energy green transformation. |
