2023 BASiC Innovation Day Successfully Held with Launch of SiC Annual New Products

Issuing time:2023-10-27 23:13

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From October 26th to 27th, the 2023 BASiC Innovation Day was held in Shenzhen. Dr. Weiwei, General Manager of BASiC Semiconductors officially released a series of new products including the 2nd-generation SiC MOSFET, automotive & industrial SiC MOSFET power modules, gate driver boards and driver ICs for power devices. The comprehensive solutions of BASiC power devices focused on the debut, attracted hundreds of representatives from electric vehicles, renewable power generation, industrial drives as well as the third-generation semiconductor industry ecosystem.

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Annual New Product Launch

01

The 2nd-generation SiC MOSFET

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The 2nd-generation SiC MOSFET seriesfrom BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance, switching loss and reliability, which can be widely used in EV motor controllers, on-board power supplies, solar inverters, PV-storage integrated converters,   EV charging, UPS and PFC power supplies.

This year, BASiC Semiconductor will launch a series of 1200V/18mΩ and 2000V/24mΩ SiC MOSFETs with higher on-current, lower on-resistance, and higher withstand voltage. Moreover, 2000V/40A SiC diode has been developed for use in conjunction with the MOSFETs.


02

Automotive SiC MOSFET Power Modules

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BASiC Semiconductor has designed and developed high and low voltage series ofautomotive SiC MOSFET power modulesspecifically for new energy vehicle main motor drives, making a comprehensive appearance at this event, including automotive HPD SiC MOSFET Module PcoreTM6 (6 Dies-in-Para & 8 Dies-in-Para), automotive DCM SiC MOSFET Module PcoreTM2, automotive TPAK SiC MOSFET Module PcoreTM1 and automotive SiC MOSFET Module PcellTM.

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This power module series employs advanced pressure-assisted silver sintering process, high-density copper wire bonding technology,and a direct liquid-cooled Pin Fin structure. The products are characterised by low switching losses, low on-resistance, high blocking voltage, high current density, and high reliability.


03

Industrial SiC MOSFET Power Modules

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To better meet the high power density needs of industrial customers, BASiC Semiconductor introduces the industrial full SiC MOSFET power module PcoreTM2 E2B,This product is designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, inference immunity, and bipolar degradation immunity. The products can be widely used in high power fast charging stations, fuel cell DCDC, UPS, high-frequency DCDC converters, high-end welding machines, solar inverters, etc.

04

门Gate drivers and driver ICs

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BASiC Semiconductor has developed gate drivers and driver ICs for a variety of application scenarios, applicable to different power devices. The new products include single & dual channel isolated driver ICs and low-side driver ICs, with insulation withstand voltage up to 8000V, driving current up to ±15A, supporting gate driver requirements for power devices with blocking voltage up to 1700V. These products can be widely used in fields of solar and energy storage systems, new energy vehicles, industrial power supplies, commercial air conditioning, etc.

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At the same time, BASiC semiconductor also launched6CP0215T12-B11, 2CP0220T series of plug-and-play SiC drivers, as well as 2QP0535T, 2QP/CP0225T series of IGBT drivers. These products integrate soft shutdown, isolated DC / DC power supply, primary and secondary power under-voltage lockout and VCE short-circuit protection, etc., and can be adapted to the power devices up to 2300V. With a maximum operating voltage of 2300V, they can be widely used in new energy vehicles, solar inverters, wind power converters, motor drives, high-power SMPS, etc.

Power device products and technology exchange

After the new product launch, the technical experts of BASiC Semiconductor introduced the company's innovative products and technical experience in SiC MOSFET, Si IGBT & SiC MOSFET mixed parallel connection, SiC power modules, gate drivers and driver ICs respectively.

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The 2023 BASiC Innovation Day was full of highlights, and the guests on site responded enthusiastically. Facing future opportunities and challenges, innovation and cooperation remain consistent topics. BASiC Semiconductor will continue to delve into the realm of SiC power devices, striving for innovation and technology peaks, joining hands with industry chain partners to create a new glory in the industry!

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