Product News | Pcore™2 - Automotive Half-bridge SiC MOSFET Modules for New Energy Vehicles

Automotive half-bridge SiC MOSFET modules using trench-type, low on-resistance SiC MOSFET

The Automotive Half-bridge SiC MOSFET Module Pcore™2 is developed and launched by BASiC Semiconductor specially as power devices in the main traction drives, it features high power density and long service life in large-scale vehicle applications, such as electric cars.

The product utilizes a standard ED3 package,   and adopts double-sided pressure-assisted silver sintering connection process, high-density copper wire bonding technology, and high-performance AMB-Si3N4 ceramic substrate, and can be adapted to standard CAV application-type package. This product effectively reduces the temperature rise and power loss of power devices in the main motor drive and fuel cell energy management systems in electric vehicles.

Pcore™2 family features low switching losses, high-speed switching, reduced temperature dependence, high reliability and operating junction temperatures up to 175°C. Thanks to the same package size as the conventional silicon-based power module, Pcore™2 can replace IGBT modules of the same package to a certain extent, thus help customers effectively shorten the product development cycle and improve the efficiency of design process.