2021 BASiC Innovation Day Opens with the Launch of New SiC ProductsIssuing time:2021-11-28 15:42 On November 27th, 2021 BASiC Innovation Day was grandly opened in Shenzhen. Dr. He Weiwei, General Manager of BASiC Semiconductor, released three series of SiC products including Automotive Full-SiC Modules, the third-generation SiC Schottky Diodes, and Hybrid SiC Discrete Devices, which received high attentions from industry insiders in the automotive, industrial, consumer fields as well as the Wide Bandgap Semiconductor Industry ecosystem. Automotive Full-SiC Modules Series of Automotive Full-SiC MOSFET Modules from BASiC Semiconductor made their first appearance at the event, which are half-bridge MOSFET module Pcore™2, 3-phase full-bridge MOSFET module Pcore™6, and plastic package single-sided cooling half-bridge MOSFET module Pcell™. This series adopts silver sintering technology, compared with traditional silicon-based IGBT power module, it has advantages of high power density, high reliability, high operating junction temperatures, low stray inductance and low thermal resistance. Their comprehensive performance has reached an international advanced level, making them ideal for new energy automobile applications. Third-Generation SiC Schottky Diodes The pursuit of lower loss, higher reliability, and more cost-effective is the common goal of the SiC power device industry. In order to constantly enhance the core competitiveness of the products, BASiC Semiconductor successfully developed the third-generation 650V and 1200V SiC Schottky diodes. Based on the 6-inch wafer processes, they have achieved higher current density, smaller cell size, stronger surge current capability. Hybrid SiC Discrete Devices The performance upgrade of modern state-of-the-art power electronics requires higher system power density and higher main switching frequencies. In response, BASiC Semiconductor firstly launched a new product: Hybrid SiC Discrete Devices. Unlike full silicon-based IGBT+FRD, this single switch device uses a silicon-based IGBT as the core switching device, and replaces the silicon-based FRD in freewheeling diode with SiC Schottky diodes, which greatly reduces the switch loss in the device. They can be used in power supply applications where there is a need for increased power density and a greater emphasis on cost effectiveness, such as vehicle power supply, vehicle air conditioning controller and other efficient power supplies. After the new product launch event, BASiC Semiconductor technical experts introduced the company's leading technologies and experience in SiC MOSFET modules, SiC power modules, SiC drivers as well as key projects in power semiconductor reliability testing. The 2021 BASiC Innovation Day was highly supported by the guests and the response was enthusiastic. In the future, BASiC Semiconductor will continue to hold innovation events in the form of technical seminars, product launches, and industry forums, so please stay tuned! |