BASiC SiC Inside! Booming BASiC

Recently, the third generation semiconductor industry domestic leader BASiC announced a blockbuster: A new energy vehicle equipped with the BASiC silicon carbide MOSFET and silicon carbide Schottky diode has been running for 120 days without fault and its running mileage has exceeded 10,000 kilometers.

In 2018, BASiC took the lead in releasing the first 1200V silicon carbide MOSFET that passed industrial-grade reliability testing. Its channel electron mobility reached 14 cm2/V·S, the breakdown field strength of gate oxide was close to 8.8 MV/cm, Vth>2.5 V under the condition of Tj=150 °C, and its short circuit withstand time under 25 °C is more than 6μs. After nearly a year of market testing, the BASiC silicon carbide MOSFET has entered the stage of small batch production, and has been tested in photovoltaic inverter, vehicle power supply, APF, high-power charging pile power supply and other industries.

At the same time, the first batch of engineering samples of the 1200V/200A automotive-grade full silicon carbide power module independently developed by BASiC has been completed, which will be tested jointly with domestic first-line main engine factories, promote the application of domestic silicon carbide power devices in the new energy vehicle industry.