BASiC Autonomously Automotive-grade Semiconductor Conducts Cold Test

Issuing time:2019-12-13 15:02

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In Hailar district, Hulunbuir city, Inner Mongolia, which is at -40°C, led by the national new energy vehicle technology innovation center (hereinafter referred to as the “national innovation center”), the “extreme low temperature” test of domestic semiconductor chips involving 12 vehicle and semiconductor enterprises including Bronze technology, BASiC, FAW, BAIC BJEV,FOTON was carried out in the frigid test base.


Starting from early December, the national innovation center came to Hailar with a test conduct a one-month and 6,000 km of low-temperature test, the vehicle equipped with a domestically produced silicon based IGBT(insulatedgate bipolar transistor), the BASiC silicon carbide diode and silicon carbide MOSFET (metal oxide semiconductor field effect transistor).






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