SiC Schottky Diodes, Planer or trench MOSFET, 10kV PiN Diodes
the performances reached the international leading level
Basic offer advanced SiC epitaxy material up to 250um and custom specific device fabrication.

To develop automotive SiC power devices for the technological innovation of electric vehicles

Jointly invested by the new shareholders Virtue Capital, Guohua Investment, and Wuxi New Heights, etc.

Room1101-1102, Block B, National Engineering Lab Building,Digital Technology Park, Gaoxin South 7th Road, District of High-Tech Industrial Park, Nanshan District, Shenzhen,Guangdong Province
+86-755-22670439     +86-755-86706526 (Business Contact)
Shenzhen BASiC Semiconductor Ltd.