SiC power semiconductor devices
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SiC Schottky Diodes, Planer or trench MOSFET, 10kV PiN Diodes
the performances reached the international leading level
Basic offer advanced SiC epitaxy material up to 250um and custom specific device fabrication.
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On February 3, BASiC Semiconductor Co., Ltd. was officially registered and established in Nagoya, Japan, constituting an...

On January 21, in an interview with a CCTV News reporter, Dr. Wang Zhihan, Chairman of BASiC Semiconductor, shared his e...

On January 18, the China Association for Science and Technology held the 2020 " Innovation China" annual work conference...

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Shenzhen BASiC Semiconductor Ltd.