SiC power semiconductor devices
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SiC Schottky Diodes, Planer or trench MOSFET, 10kV PiN Diodes
the performances reached the international leading level
Basic offer advanced SiC epitaxy material up to 250um and custom specific device fabrication.
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Three series of SiC products including Automotive Full-SiC Modules, the third-generation SiC Schottky Diodes, and Hybrid SiC Discrete Devices.

The innovated and cooperative icon for China-Europe Wide Bandgap Semiconductor Industry - university- research cooperation between China and Europe.

Room1101-1102, Block B, National Engineering Lab Building,Digital Technology Park, Gaoxin South 7th Road, District of High-Tech Industrial Park, Nanshan District, Shenzhen,Guangdong Province
+86-755-22670439 info@basicsemi.com
Shenzhen BASiC Semiconductor Ltd.