SiC Schottky Diodes

产品详情

As a wide bandgap semiconductor material, SiC has better performance than traditional silicon-based devices. The wide bandgap (3.26eV), high critical field (3 *106 V/cm) and high thermal conductivity (4.9W/cm·K) of SiC make power semiconductor devices more efficient and faster, and reduce the cost, volume and weight of equipment. The BASiC SiC Schottky diode provides standard industrial package with superior performance and high working effciency.

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Product advantage


No reverse recovery current	High surge current capability	Low reverse leakage at high temperature	High Avalanche capability

Product list

Product	DataSheet	V_RRM（V）	I_F(A)	I_FSM(A)	V_F(V)	P_tot(W)	Q_C(nC)	Package Name
B2DM060065N1	‍	650	60	386	1.42	300	169	SOT-227
B3D05120E		1200	5	45	1.45	101	24	TO-252-2
B3D20120H		1200	20	160	1.40	259	106	TO-247-2
B3D40120HC		1200	40	160	1.40	258	106	TO-247-3
B2D60120H1		1200	60	340	1.46	833	347	TO-247-2
B2DM100120N1		1200	100*	540*	1.53	652*	465	SOT-227
B1D02065E		650	2	16	1.4	39	6.8	TO-252-2
B1D02065K		650	2	16	1.4	43	6.8	TO-220-2
B2D04065E1		650	4	31	1.3	90	14	TO-252-2
B2D04065D1		650	4	33	1.3	45	14	DFN 5*6
B2D04065KF1		650	4	41	1.33	59	13	TO-220F-2
B2D04065V		650	4	32	1.35	25	12	SMBF
B2D04065K1		650	4	34	1.33	91	14	TO-220-2
B2D06065E1		650	6	50	1.32	115	17	TO-252-3
B1D06065F		650	6	45	1.43	89	17	TO-263-2
B2D06065K1		650	6	44	1.31	133	18	TO-220-2
B2D06065KF1		650	6	59	1.31	52	18	TO-220F-2
B1D06065KS	‍	650	6	45	1.44	70	17	TO-220-isolated
B2D06065Q		650	6	45	1.33	98	17	DFN8*8
B1D08065E		650	8	60	1.43	109	24	TO-252-2
B1D08065F		650	8	60	1.43	112	24	TO-263-2
B2D08065K1		650	8	64	1.32	148	24	TO-220-2
B1D08065KF		650	8	64	1.4	48	24	TO-220F-2
B1D08065KS		650	8	64	1.46	74	24	TO-220-isolated
B2D08065KS		650	8	64	1.28	86	24	TO-220-isolated
B2D10065E1		650	10	73	1.3	125	31	TO-252-3
B2D10065F1		650	10	70	1.31	145	30	TO-263-3
B1D10065H		650	10	75	1.43	158	29	TO-247-2
B2D10065K1		650	10	85	1.31	144	29	TO-220-2
B2D10065KF1		650	10	72	1.32	76	31	TO-220F-2
B1D10065KS		650	10	75	1.43	89	29	TO-220-isolated
B2D10065Q		650	10	70	1.33	126	29	DFN8*8
B2D10065KS		650	10	85	1.36	109	29	TO-220-isolated
B1D12065K		650	12	90	1.42	170	38	TO-220-2
B1D15065K		650	15	112	1.42	194	46	TO-220-2
B2D15065K		650	15	120	1.29	211	46	TO-220-2
B2D16065HC1		650	8/16*	64*	1.32	164*	23	TO-247-3
B2D20065H1		650	20	146	1.34	300	60	TO-247-2
B2D20065HC1		650	10/20*	70*	1.34	172*	31	TO-247-3
B2D20065F1		650	20	140	1.32	230	59	TO-263-3
B2D20065K1		650	20	125	1.34	288	58	TO-220-2
B2D20065TF		650	20	70	1.3	77	60	TO-3PF
B2D30065HC1		650	30	103*	1.32	217*	45	TO-247-3
B1D30065TF		650	30	110*	1.37	72*	50	TO-3PF
B2D30065H1		650	30	200	1.38	500	83	TO-247-2
B2D40065H1		650	40	240	1.4	555	114	TO-247-2
B2D40065HC1		650	20/40*	146*	1.34	268*	59	TO-247-3
B2D02120E1		1200	2	22	1.35	77	13	TO-252-2
B2D02120K1		1200	2	20	1.35	80	13	TO-220-2
B2D05120E1		1200	5	57	1.3	122	31	TO-252-2
B2D05120K1		1200	5	55	1.3	147	32	TO-220-2
B2D10120E1		1200	10	95	1.38	151	49	TO-252-2
B2D10120H1		1200	10	90	1.36	143	51	TO-247-2
B2D10120HC1		1200	5/10*	55*	1.3	147*	31	TO-247-3
B2D10120K1		1200	10	90	1.37	185	51	TO-220-2
B2D15120H1		1200	15	135	1.34	283	84	TO-247-2
B2D16120HC1		1200	8/16*	80*	1.34	170*	48	TO-247-3
B2D20120H1		1200	20	190	1.35	366	120	TO-247-2
B2D20120F1		1200	20	180	1.3	283	122	TO-263-2
B2D20120HC1		1200	10/20*	90*	1.4	140*	55	TO-247-3
B2D30120H1		1200	30	225	1.36	428	172	TO-247-2
B2D30120HC1		1200	15/30*	135*	1.35	220*	89	TO-247-3
B2D40120H1		1200	40	280	1.38	681	225	TO-247-2
B2D40120HC1		1200	20/40*	180*	1.36	259*	120	TO-247-3

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